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ZnO薄膜的XPS价带谱研究
引用本文:李万程,杜国同,杨小天,刘博阳,张源涛,赵佰军,姜秀英. ZnO薄膜的XPS价带谱研究[J]. 高等学校化学学报, 2004, 25(11): 2078-2081
作者姓名:李万程  杜国同  杨小天  刘博阳  张源涛  赵佰军  姜秀英
作者单位:吉林大学电子科学与工程学院, 集成光电子国家重点实验室, 长春130023
基金项目:国家自然科学基金 (批准号 :60 1760 2 6,60 1770 0 7)资助
摘    要:用MOCVD方法在Al2O3衬底c面生长ZnO薄膜,用XPS对薄膜进行了测量.结果显示,与O1s和Zn2p态相比,Zn3d态有更大的化学位移,可用于更有效地分析ZnO薄膜变化;随着Zn3d+Zn4s态和Zn3d态电子与O2p态电子耦合的增强,Zn3d态电子的结合能变大;二乙基锌(DEZn)源温是影响ZnO成键的重要因素.

关 键 词:ZnO薄膜  XPS  价带谱  
文章编号:0251-0790(2004)11-2078-04
收稿时间:2003-12-25

XPS Valence Band of ZnO Films
LI Wan-Cheng,DU Guo-Tong,YANG Xiao-Tian,LIU Bo-Yang,ZHANG Yuan-Tao,ZHAO Bai-Jun,JIANG Xiu-Ying. XPS Valence Band of ZnO Films[J]. Chemical Research In Chinese Universities, 2004, 25(11): 2078-2081
Authors:LI Wan-Cheng  DU Guo-Tong  YANG Xiao-Tian  LIU Bo-Yang  ZHANG Yuan-Tao  ZHAO Bai-Jun  JIANG Xiu-Ying
Affiliation:State Key Laboratory on Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, Changchun 130023, China
Abstract:ZnO films are grown by the plasma-assisted metal organic chemical vapor deposition(MOCVD) on c-sapphire and are measured by XPS. The results show that comparing with O 1s and Zn 2p, Zn 3d has more obvious chemical displacement which can help us study the characteristics of ZnO film more effectively. The binding energy of Zn 3d electron becomes larger along with the strengthening of coupling between Zn 3d or Zn 3d+Zn 4s and O 2p. The temperature of DEZn is an important factor which affects the formation of covalent bond between Zn and O atoms.
Keywords:ZnO films  XPS  Valence band spectrum
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