The relationship between the macroscopic properties of PECVD silicon nitride and oxynitride layers and the characteristics of their networks |
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Authors: | M Klanj?ek Gunde M Ma?ek |
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Institution: | (1) National Institute of Chemistry, SI-1000 Ljubljana, Hajdrihova 19, Slovenia, SI;(2) Faculty of Electrical Engineering, SI-1000 Ljubljana, Tržaška 25, Slovenia, SI |
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Abstract: | Silicon nitride and oxynitride films have been deposited on silicon wafers using plasma-enhanced chemical vapour deposition.
Various amounts of ammonia, silane and nitrous oxide gases were applied at fixed total gas flow and at the same deposition
temperature. The dependence of the macroscopic properties of the layers such as refractive index, internal stress and etch
rate on the reaction atmosphere during deposition has been demonstrated. The chemical structure of amorphous layers was studied
using infrared spectroscopy. The network was found to be characterised by SiNxOyHz tetrahedra, joined to each other by common corners. The characteristic vibrational bands due to species that join tetrahedral
units (N(-Si≡)3, ≡Si-N-Si≡, ≡Si-O-Si≡) and species that stop this interconnection (Si-H, N-H) were determined and discussed with reference
to the corresponding species available during deposition. The analysis resulted in the determination of the relationship between
the chemical structure of the network and the layer’s refractive index, internal stress and etch rate.
Received: 24 July 2000 / Accepted: 30 May 2001 / Published online: 30 August 2001 |
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Keywords: | PACS: 68 55 -a 78 66 Jg |
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