ZnO-SnO_2透明导电薄膜的制备及性能研究

采用二步成胶工艺制备ZnO-SnO_2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10~(-3) Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO_2透明导电薄膜性能优异.

Preparation and Characterization of ZnO-SnO_2Transparent and Conducting Thin Film

Transparent and conducting polycrystalline oxide thin films of ZnO-SnO_2 are prepared on glass subsrate by the process of gelatination in two-step.The crystalline structure of the thin film, surface morphology, optical transmittance and conductivity are characterized by X-ray diffraction(XRD), Atomic force microscope(AFM), Spectrophotometeric analysis(UV-Vis),device of film analysis and Four-point probes, respectively.The results indicate that the transparent conducting thin film with Zn/Sn=9/12 has the optimal performance at the annealing tempareture of 500 ℃ and the ultraviolet-visible light transmittance reached 90% with 3.15×10~(-3) Ω·cm resistance.Compared with other methods,transparent and conducting thin films of ZnO-SnO_2 prepared by gelatination in two-step has excellent characteristics.