| STM study of In nanostructures formation on Ge（001） surface at different coverages and temperatures |
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| 引用本文： | 秦志辉,时东霞,庞世瑾,高鸿钧. STM study of In nanostructures formation on Ge（001） surface at different coverages and temperatures[J]. 中国物理 B, 2008, 17(3): 1055-1059 |
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| 作者姓名： | 秦志辉 时东霞 庞世瑾 高鸿钧 |
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| 作者单位： | Nanoscale Physics and Devices Laboratory, Institute ofPhysics,Chinese Academy of Sciences, Beijing 100080,China;Nanoscale Physics and Devices Laboratory, Institute ofPhysics,Chinese Academy of Sciences, Beijing 100080,China;Nanoscale Physics and Devices Laboratory, Institute ofPhysics,Chinese Academy of Sciences, Beijing 100080,China;Nanoscale Physics and Devices Laboratory, Institute ofPhysics,Chinese Academy of Sciences, Beijing 100080,China |
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| 基金项目： | STM study of In nanostructures formationon Ge(001)[1.8mm] surface at different coverages and temperatures |
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| 摘 要： | Different In/Ge（001） nanostructures have been obtained by annealing the samples at 320℃ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge（001） nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{103}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.
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| 关 键 词： | 扫描显微术 表面结构 Ge In |
| 收稿时间： | 2007-01-09 |
| 修稿时间： | 2007-09-28 |
STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures |
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| Qin Zhi-Hui,Shi Dong-Xi,Pang Shi-Jin and Gao Hong-Jun. STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures[J]. Chinese Physics B, 2008, 17(3): 1055-1059 |
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| Authors: | Qin Zhi-Hui Shi Dong-Xi Pang Shi-Jin Gao Hong-Jun |
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| Affiliation: | Nanoscale Physics and Devices Laboratory, Institute ofPhysics,Chinese Academy of Sciences, Beijing 100080,China |
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| Abstract: | Different In/Ge(001) nanostructures have been obtained by annealingthe samples at 320du with different coverages of In. Annealing asample with a critical coverage of 2.1 monolayer of In, differentIn/Ge(001) nanostructures can be obtained at different temperatures.It is found that thermal annealing treatments first make In atomsform elongated Ge{{}103{}}-faceted In-clusters, which will growwider and longer with increasing temperature, and finally cover thesurface completely. |
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| Keywords: | scanning tunnelling microscopy surface structures Ge In |
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