Heat-stimulated currents in semi-insulating gallium arsenide

The energy spectrum of charge carrier traps of semi-insulating n-type gallium arsenide has been investigated by the method of heat-stimulated currents and the parameters characterizing these traps have been estimated. Trap acceptor levels with energies 0.37, 0.41 and 0.17, 0.28, 0.32, 0.34, 0.38, 0.40 eV have been found for samples with the specific resistivity 2.7 · 10⁷ and 1.6 · 10⁸ · cm, respectively. The results obtained are well explained within the framework of the theory of a compensated semiconductor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 22–26, November, 1971.The authors are grateful to A. P. Vyatkin, V. G. Voevodin, and E. V. Kozeev for kindly providing the gallium arsenide crystals and stimulating the research.