| Affiliation: | (1) CCAST (World Laboratory), P.O. Box 8730, 100080 Beijing, P.R. China;(2) Department of Physics, Inner Mongolia University, 010021 Hohhot, P.R. China;(3) Department of Basic Sciences, Inner Mongolia Agricultural University, 010018 Hohhot, P.R. China |
| Abstract: | A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.Received: 12 June 2003, Published online: 22 September 2003PACS: 63.20.Kr Phonon electron and phonon-phonon interactions - 71.38.-k Polarons and electron-phonon interactions - 73.20.At Surface states, band structure, electron density of states |
