铜互连线静水应力的有限元模拟

本文根据工业上使用的铜大马士革互连线尺寸建立了三维有限元模型，模拟计算了铜大马士革互连线中对应力诱导形成空洞很关键的静水应力分布，对比分析了不同低k介质、阻挡层材料和互连线深宽比对静水应力的影响。研究结果表明，静水应力受k介质、阻挡层材料和互连线深宽比影响很大，静水应力在铜大马士革互连线中分布不均匀且最大应力出现在互连线表面。

Finite element simulation of hydrostatic stress in copper interconnects

This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding (SIV) in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.