Morphological and compositional evolution of the ge/si(001) surface during exposure to a si flux |
| |
Authors: | Rastelli A von Känel H Albini G Raiteri P Migas D B Miglio Leo |
| |
Affiliation: | INFM and Dipartimento di Fisica "A Volta" della Università degli Studi di Pavia, Via Bassi 6, I-27100 Pavia, Italy. |
| |
Abstract: | By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (M x N) to (2 x N), and eventually to (2 x 1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|