Multichannel mueller matrix ellipsometry for simultaneous real-time measurement of bulk isotropic and surface anisotropic complex dielectric functions of semiconductors

We have applied a dual rotating-compensator multichannel ellipsometer to acquire spectra ( approximately 2.0-4.6 eV) in all 16 elements of the Mueller matrix associated with a specularly reflecting surface, in a minimum time of 0.25 s. In this initial study, such results have been collected for the (110) silicon surface at an incidence angle of approximately 70 degrees and have been used to derive spectra in the bulk isotropic dielectric function epsilon (b)= epsilon (1b)-i epsilon (2b) and the surface-induced dielectric function anisotropy Delta epsilon =Delta epsilon (1)-iDelta epsilon (2). Thus, this instrument shows promise for simultaneous real-time measurement of epsilon (b) and Delta epsilon spectra in oblique reflection during the fabrication of semiconductor structures having bulk isotropic components.