Floating Zone Crystal Growth and Structure Analysis of a Novel ScB19 Family Compound, ScB19+xSiy |
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Authors: | Takaho Tanaka Akira Sato |
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Affiliation: | Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan |
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Abstract: | Single crystals of a novel ScB19 family compound ScB19+xSiy were grown by the floating zone method using a four-lamp mirror-type image furnace. A small amount of silicon addition to ScB19 which decomposes at elevated temperatures without melting allowed it to coexist with the liquid phase and as a resultant made the floating zone crystal growth possible. Powder X-ray diffraction analysis confirmed the grown crystals of ScB19+xSiy to be isostructural to ScB19. It was found that the crystal structure of ScB19+xSiy solved based on single-crystal X-ray data is tetragonal with lattice constants of a, b=1.03081(2) nm, c=1.42589(3) nm, space group P41212 or P43212 and is basically isotypic with α-AlB12 structure type. In the crystal structure boron atoms form a three-dimensional framework based on interconnected B12 icosahedra and B22 polyhedra. The Sc atoms reside in three of five Al sites in the α-AlB12 structure and Si resides in a bridge site bonding two B22 units. |
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Keywords: | boron-rich scandium boride scandium borosilicide floating zone crystal growth ScB19+xSiy ScB19 tetragonal crystal structure icosahedral boron cluster. |
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