Electron beam duplication of integrated optical circuits and masks

An electron beam duplication technique has been developed that permits the rapid (2–15 min) fabrication of masks suitable for integrated optical elements (2000 A precision over a 5 × 5 cm area). The technique is based on the use of a master mask, which, when exposed to UV light emits electrons in the desired pattern. The electrons are then accelarated and focused onto the substrate. We have used this technique to duplicate complex optical waveguide structures in electron resist (polyphenylsiloxane) and to prepare masks for the fabrication of waveguides in inorganic materials (SiO₂).