Calculated band structures,optical constants and electronic charge densities for InAs and InSb |
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| Authors: | Carmen Varea De Alvarez JP Walter RW Boyd ML Cohen |
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| Institution: | 1. Department of Physics, University of California, USA;2. Inorganic Materials Research Division, Lawrence Berkeley Laboratory, Berkeley, Calif. 94720, U.S.A. |
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| Abstract: | The energy band structure, reflectivity, modulated reflectivity and imaginary part of the frequency dependent dielectric function are calculated for InAs and InSb using the empirical pseudopotential method. Comparison is made with the measured reflectivity and modulated reflectivity and prominent features in the experimental spectra are identified and associated with interband transitions in specific regions of the Brillouin zone. The wavefunctions obtained from our calculated band structures are used to calculate the electronic charge density as a function of position in the unit cell. |
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