Investigation of the defect manganese silicide MnnSi2n−m |
| |
Authors: | Lionel M Levinson |
| |
Institution: | General Electric Corporate Research and Development, Schenectady, New York 12301 USA |
| |
Abstract: | Low-temperature magnetization studies upon melt-grown single crystals of the defect manganese silicide MnnSi2n?m have shown this material to contain small quantities of plate-like MnSi precipitates. Metallographic and electron microprobe analyses have confirmed this result. The strongly magnetic MnSi precipitates dominate the diamagnetic MnnSi2n?m matrix, and are responsible for the magnetic behavior reported in the literature. MnSi is metallic, and the plate-like metallic precipitates degrade the thermoelectric efficiency of the degenerate semiconductor MnnSi2n?m. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|