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Photoexcited hot phonons and phonon lifetimes in GaAs
Authors:J.C.V. Mattos  W.O.N. Guimarães  R.C.C. Leite
Affiliation:Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas, Campinas, S.P., Brazil
Abstract:A study of optical lifetimes as determined from surface conditions is made through Raman lineshape analysis and non-equilibrium phonon distributions induced by energetic photoelectrons. Results indicate that first-order Raman scattered linewidths are lifetime determined and that phonon lifetimes depend upon surface conditions. Our observations also give strong support to the mechanism and analysis proposed earlier for hot phonon generation through photoelectron relaxation.
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