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Luminescence of arsenic vacancy-related defects in GaAs |
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| Authors: | R. Romano-Moran K.L. Ashley |
| Affiliation: | Electronic Sciences Center, Southern Methodist University, Dallas, Texas 75222, U.S.A. |
| Abstract: | Photoluminescence measurements at 77°K on solution grown and heat treated GaAs specimens are shown to exhibit a luminescent band near 8900 A. This band is suggested to be related to arsenic vacancies. |
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