In‐Situ Monitoring of the Solid‐State Microstructure Evolution of Polymer:Fullerene Blend Films Using Field‐Effect Transistors |
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Authors: | John G Labram Ester Buchaca Domingo Natalie Stingelin Donal D C Bradley Thomas D Anthopoulos |
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Institution: | 1. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom;2. Department of Materials and Centre for Plastic Electronics, Exhibition Road, Imperial College London, London SW7 2AZ, United Kingdom |
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Abstract: | Organic field‐effect transistors (OFETs) are used to investigate the evolution of the solid‐state microstructure of blends of poly(3‐hexylthiophene) (P3HT) and 6,6]‐phenyl C61‐butyric acid methyl ester (PC61BM) upon annealing. Changes in the measured field‐effect mobility of holes and electrons are shown to reveal relevant information about the phase‐segregation in this system, which are in agreement with a eutectic phase behavior. Using dual‐gate OFETs and in‐situ measurements, it is demonstrated that the spatial‐ and time‐dependence of microstructural changes in such polymer:fullerene blend films can also be probed. A percolation‐theory‐based simulation is carried out to illustrate how phase‐segregation in this system is expected to lead to a substantial decrease in the electron conductivity in an OFET channel, in qualitative agreement with experimental results. |
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Keywords: | Organic Photovoltaic Organic Field‐Effect Transistors Organic Semiconducting Blends Organic Semiconductors Organic Electronics Thin Films |
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