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Carrier density dependence of soft TO-phonon in SnTe by Raman scattering
Authors:S Sugai  K Murase  S Katayama  S Takaoka  S Nishi  H Kawamura
Institution:Department of Physics, Osaka University, 1-1 Machikane-yama, Toyonaka, 560, Japan
Abstract:The frequency of soft TO-phonon in SnTe was observed by Raman scattering below the transition temperature, for the specimens of various carrier concentrations. The result was analyzed in terms of the interband electron to TO-phonon interaction.
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