The low temperature electrical properties of 1T-TaS2

Measurements of the electrical resistivity of 1T-TaS₂ to 0.03 K show that the increase in resistivity below ～ 50 K is extrinsic.Below 2 K the resistivity is described by ? = ?₀ exp $\text{T}{}_0\text{/T)}\text{1}\text{3}$. Because of this fractional power law behavior, we conclude that the increase is due to Anderson localization by random impurity and/or defect potentials. Other difficulties in understanding the properties of 1T-TaS₂ are also pointed out.