On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si

Unlike the electron-impurity interaction, the electron-acoustic phonon interaction generates a temperature-dependent cyclotron resonance lineshape. The difference is due to the temperature-dependent phonon distribution and the quasi-inelastic nature of the electron-phonon scattering. Calculations based on the proper connected diagram expansion are in qualitative agreement with experiments on inversion-layer electrons in Si in the temperature range 8–65 K.