Electronic structure of the GeGaAs (111) and () heterojunctions |
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Authors: | E Louis |
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Institution: | Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A. |
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Abstract: | The electronic density of states for GeGaAs (111) and () heterojunctions has been calculated. No interface states in the fundamental gap are found. A sizeable density of interface states below the top of the valence band is found for GeGa bonds-(111) junctions-interface states in the ionic gap are reported. The effect of varying the amount of the valence band discontinuity across the interface is discussed. |
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