2D degenerate electron gas at Ba/<Emphasis Type="Italic">n</Emphasis>-AlGaN and Ba/<Emphasis Type="Italic">n</Emphasis>-GaN interfaces |
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| Authors: | G V Benemanskaya S N Timoshnev M N Lapushkin G E Frank-Kamenetskaya |
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| Institution: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St.Peterburg,Russia;2.St. Peterburg State Technological Institute (Technological University),St.Peterburg,Russia |
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| Abstract: | Ba/n-GaN(0001) and Ba/n-AlGaN(0001) interfaces were investigated for the first time by means of ultraviolet photoelectron spectroscopy. The spectra
of the photoemission from a valence band along with the spectra of the core levels of Ga 3d, Al 2p, and Ba 4d were studied. The formation of a 2D degenerate electron gas (an accumulated layer on the n-GaN and n-AlGaN surfaces during adsorption of Ba atoms) was revealed. |
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