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Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition |
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| Authors: | D Rogers FH Teherani P Kung K Minder M Razeghi |
| Institution: | aNanovation SARL, 103 bis rue de Versailles 91400 Orsay, France;bUniversité de Technologie de Troyes, 10-12 rue Marie Curie, 10010, France;cMPT, 1801 Maple Ave., Evanston, IL 60201-3135, USA;dCenter for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA |
| Abstract: | n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al2O3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtained using pulsed laser deposition for the n-ZnO growth and metal–organic chemical vapor deposition for the p-GaN:Mg were key factors enabling the injection of holes and the radiative near band edge recombination in the ZnO. In this paper we present the materials characterization of this structure using x-ray diffraction, scanning electron microscopy and atomic force microscopy. |
| Keywords: | Pulsed laser deposition UV ZnO p– n Heterojunction LED |
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