表面复合速度和结深对硅扩散n十-p 结太阳电池性能的影响

假设扩散区的杂质分布为高斯分布,本文给出了扩散n~+-P结太阳电池扩散n~+区少子连续性方程一个形式简单的解。在此基础上对若干实例进行了计算和分析,以研究表面复合速度和结深对太阳电池性能的影响。 本文指出,为使太阳电池有高的收集效率,必须把表面复合速度控制在10~4cm/s以下。除了表面复合速度以外,也研究了杂质分布引起的内建漂移场对光生少子在表面复合的影响。内建漂移场与结深有关。本文指出,与较高的漂移场相应的浅结更有利于削弱光生少子在表面的复合。

Effects of Surface Recombination Velocity and Junction Depth on the Performance of n~+ - p Diffused Junction Silicon Solar Cells

Assuming the impurity profile to be Gaussian in the diffused region, a formally simple resolution of minority carrier continuity equation in the diffused region has been obtained for n+-p diffused junction silicon solar cells. On the basis of that, computations and analyses are made on some practical examples to investigate the influence of surface recombination velocity and junction depth on the performance of the solar cells. The present work has shown that in order to obtain a high collective efficiency for solar cells, it is necessary to control the surface recombination velocity below 104 cm/s. Besides, the influence of built-in drift field caused by impurity profile on the minority carrier recombination at the surface is also been investigated. The built-in drift field is related with the junction depth. It is shown that the corresponding shallow junction depth in higher field is more advantageous for reducing the minority carrier recombination at the surface.