The simulation of two-beam high-dose ion implantation into solid targets

A physicomathematical model and a BEAM2HD program for the dynamic simulation of one-and two-beam high-dose ion implantation into multilayer and multicomponent targets are developed. The number of target layers is no more than three, and the number of sorts of atoms in each of the layers is no more than seven. The simulation is performed by the Monte Carlo method. Numerical results for the formation of C _x→3N _y→4 superhard layers by two-beam high-dose implantation of nitrogen ions into the Si₃N₄/C/Si₃N₄/Si system are presented.