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Induced defects in a-Si:H/a-SiNx:H multilayers by use of EMT and PAT
Institution:1. Pharmacy College, China Pharmaceutical University, Nanjing, 210009, China;2. Department of Physics, Nanjing University, Nanjing, 210008, China;1. Belgian Ceramic Research Centre (Member of EMRA), Avenue Gouverneur Cornez 4, Mons, B-7000 Belgium;2. MTM KULeuven, Kasteelpark Arenberg 44, Leuven, B-3001 Belgium;3. EMPA UCLouvain, Place Sainte Barbe 2, Louvain-la-Neuve, B-1348 Belgium;1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;2. Aalto University, Värmemansgränden 2, 02150 Espoo, Finland;3. Department of Physics, Panjab University, Chandigarh 160 014, India;4. Institute of Physics, Bhubaneshwar, Odisha 751005, India;5. Amity University, Noida 201313, Uttar Pradesh, India;1. Guangdong Engineering Technology Research Center of Efficient Green Energy and Environmental Protection Materials, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, PR China;2. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, PR China;3. Guangdong Provincial Engineering Technology Research Center for Low Carbon and Advanced Energy Materials, Guangzhou, 510631, PR China;4. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;1. Department of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan;2. Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan;3. Department of Physics, Government College University Faisalabad, 38000, Pakistan;1. Faculty of Textile Science and Technology, Shinshu University, 3-15-1, Tokida, Ueda, Nagano 386-8567, Japan;2. College of Textile and Clothing Engineering, Soochow University, Suzhou 215021, PR China;1. Department of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan;2. Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan;3. Institute of Chemical Sciences, Bahauddin Zakaryia University, Multan 60000, Pakistan;4. Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan;5. Sustainable Energy Technologies (SET) Center Building No 3, Room 1c23, College of Engineering, King Saud University, PO-BOX 800, Riyadh 11421, Saudi Arabia
Abstract:The induced defects and their distribution in a-Si:H/a-SiNx:H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects are found only in the interface region away from the substrate.
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