Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure |
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| Institution: | 1. Superior School of Technology, Materials Physics and Subatomic Laboratory, Ibn-Tofail University, PB 242, 14000 Kenitra, Morocco;2. Institut de Disseny i Fabricació, Universitat Politècnica, València, Spain;3. Laboratory of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, University Hassan II of Casablanca, BP146, Mohammedia, Morocco;4. Faculty of Science and Technology, Jan Dlugosz University in Czestochowa, Al. Armii Krajowej 13/15, 42201 Czestochowa, Poland;1. Laboratory of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, University Hassan II of Casablanca, BP146, Mohammedia, Morocco;2. Superior School of Technology, Materials Physics and Subatomic Laboratory, Ibn-Tofail University, PB 242, 14000 Kenitra, Morocco;3. Faculty of Technology, University of Saad Dahlab Blida. 1, Blida, Algeria;4. Faculty of Science and Technology, Jan Dlugosz University in Czestochowa, Al. Armii Krajowej 13/15, 42201 Czestochowa, Poland;1. Laboratory of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, University Hassan II of Casablanca, BP146 Mohammedia, Morocco;2. Superior School of Technology, Materials Physics and Subatomic Laboratory, Ibn-Tofail University, PB 242, 14000 Kenitra, Morocco;3. Faculty of Science and Technology, Jan Dlugosz University in Czestochowa, Al. Armii Krajowej 13/15, 42201, Czestochowa, Poland;4. Faculty of Technology, University of Saad, Dahlab Blida 1, Blida, Algeria |
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| Abstract: | We report on the effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure (NCS). Enhancement of photoluminescence (PL) intensity was observed from tensilely strained NCS, compared with unstrained NCS. In addition, drastic improvement of the activation energy for thermal quenching was achieved by introduction of tensile strain to NCS in spite of the reduction of the band discontinuity. These improvements were attributed to the modification of the band structure and the local-strain variation due to the alloy randomness of the InGaP buffer layer. |
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