Screening effect on the binding energies of shallow donors,acceptors and excitons in finite-barrier quantum wells |
| |
| Institution: | 1. Department of Physics, Trakya University, Edirne, 22030, Turkey;2. Department of Physics, Middle East Technical University, Ankara, 06531, Turkey;1. Department of Chemistry, Bishnupur Ramananda College, Bishnupur, Bankura 722122, West Bengal, India;2. Department of Chemistry, Hetampur Raj High School, Hetampur, Birbhum 731124, West Bengal, India;3. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal, India;4. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India;1. Faculty of Science, Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;2. Dokuz Eylul University, Faculty of Science, Physics Department, 35390 Izmir, Turkey;3. Faculty of Education, Department of Mathematical and Natural Science Education, Cumhuriyet University, 58140 Sivas, Turkey;4. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia |
| |
| Abstract: | The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge–Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga1−xAlxAs quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ϵ (r) on the calculation of binding energies are specifically investigated. The use of ϵ (r) in comparison with the use of a constant ϵ0increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
