Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates |
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| Affiliation: | 1. University of Helsinki, Faculty of Agriculture and Forestry, Department of Forest Sciences, P.O.Box 24, FI-00014, Finland;2. Aalto University, School of Engineering, Department of Built Environment, P.O.Box 14100, FI-00076 Aalto, Finland;3. University of Eastern Finland, Faculty of Science and Forestry, School of Forest Sciences, P.O. Box 111, FI-80101 Joensuu, Finland |
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| Abstract: | In this work, we present substrate orientation effects on optical properties in vertically stacked In0.5Ga0.5As layers grown by molecular beam epitaxy on (311)A/B and reference (100) GaAs substrates. Samples were grown for different GaAs spacer thicknesses. The spacer thickness variation shows the influence on PL spectra for all planes. The differences in peak shape, peak position, amplitude and integrated luminescence have been observed for all surfaces. These differences suggest that indium migration in spacer layers is caused by the strain fields induced by islands buried below, and is different at the three surfaces. Vertical electronic coupling between quantum dots is confirmed by photoluminescence temperature dependence. |
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