Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field |
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| Institution: | 1. Physics Department, Cumhuriyet University, Sivas, 58140, Turkey;2. Physics Department, Dokuz Eylül University, ?, Turkey;1. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;2. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;3. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. Unidad Académica de Física. Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060. Zacatecas, Zac., Mexico;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico;1. Cumhuriyet University, Faculty of Science, Physics Department, 58140 Sivas, Turkey;2. Cumhuriyet University, Faculty of Education, Department of Mathematical and Natural Science Education, 58140 Sivas, Turkey;3. Physics Department, Faculty of Science, Dokuz Eylül University, 35390 Izmir, Turkey;1. Department of Physics, University of Süleyman Demirel, 32260 Isparta, Turkey;2. Institute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan;3. Baku State University Baku Az1148, Azerbaijan |
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| Abstract: | The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1 ? xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic field. The applied magnetic field is taken to be parallel to the axis of growth of the quantum well structure. The role of the asymmetric barriers, magnetic field, and well width in the excitonic binding is discussed as the tunability parameters of the GaAs/Ga1 ? xAlxAs system. |
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