Infrared-induced emission from silicon quantum wires |
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| Affiliation: | 1. Department of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China;2. Sauvage Laboratory for Smart Materials, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China;3. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;4. Beijing Santel Technology & Trading Corp., Beijing 100039, China;5. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;6. Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p–n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion. |
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