Investigation of delta-doped quantum wells for power FET applications |
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| Institution: | 1. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;2. State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;4. School of Microelectronics, Xidian University, Xi''an 710071, China |
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| Abstract: | We report the use of strain-balanced quantum-well structures to generate high carrier density, high mobility layers suitable for power field effect transistor (FET) applications. Standard designs of modulation-doped heterojunctions have a sheet carrier density limited to a maximum of ∼3 × 1012cm−2, while doped channel devices allow higher densities, but with degraded mobility. By combining the technique of delta-doping with the use of a compositionally graded InGaAs quantum well, grown strain balanced on InP, high mobilities and excellent saturation drift velocities have been obtained for sheet densities of 4–5 × 1012cm−2. This paper describes the structure and electrical properties of the layers and assesses their potential for FETs. |
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