Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
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| Institution: | 1. Research Institute of Chongqing, Changchun University of Science and Technology, Chongqing 401135, China;2. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin, China;1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, OH 45433, USA;2. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USA;3. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;1. School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan, 250100, China;2. Shandong Inspur Huaguang Optoelectronics Co., Ltd., Weifang, 261061, China;1. Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea;2. Department of Mechanical Engineering, Yonsei University, Seoul 03722, Republic of Korea;1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;1. College of Mathematics and Physics, North China Electric Power University, Baoding 071002, China;2. Hebei Key Laboratory of Optic-Electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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| Abstract: | We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. |
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