Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels

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收稿时间：	15 July 1996
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