Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures |
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| Affiliation: | 1. Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu 610031, China;2. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China;3. College of Science and Engineering, Chengdu Normal University, Chengdu 610031, China;4. Institute of Advanced Study, Chengdu University, Chengdu 610106, China;5. Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou 350117, China;1. Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences, Ekaterinburg 620990, Russia;2. Ural Federal University, Institute of Natural Science and Mathematics, Ekaterinburg 620002, Russia;2. Centre of Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, India |
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| Abstract: | Zinc delta-doped GaAs and pseudomorphic GaAs/In}0.2Ga0.8As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (full-width at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1 × 1013cm−2) By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility. |
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