Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates |
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| Institution: | 1. Department of Electrical Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan;2. Department of Digital Technology Design, Tungfang Design Institute, Kaohsiung, Taiwan;3. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan;4. Department of Electronic Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan;5. Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan;6. Department of Physics, Chung Yuan Christian University, Chungli, Taiwan;1. Laboratory for Optical Spectroscopy of Nanostructures, Division of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroc?aw University of Science and Technology, Wybrze?e Wyspiańskiego 27, Wroc?aw 50-370, Poland;2. Technische Physik & Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg D-97074, Germany;3. School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews KY16 9SS, United Kingdom;4. Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, Universität Kassel, Heinrich-Plett-Str. 40, D-34132 Kassel, Germany;5. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany;1. Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences de Monastir, Université de Monastir, Avenue de l''environnement, 5019, Monastir, Tunisia;2. Dept. of ECE, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, 482005, India;3. Department of Basic & Applied Science, National Institute of Technology, Arunachal Pradesh, 791112, India;1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Tokyo, Japan;2. Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan |
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| Abstract: | Time-resolved photoluminescence (PL) measurements were performed for two different quantum nanostructures on V-groove patterned substrates; SiGe/Si quantum wells (QWs) on V-grooved Si substrates and AlGaAs spontaneous vertical quantum wells on V-grooved GaAs substrates. Anomalous behaviours of the PL, such as the decrease of the decay time of the SiGe (111) QWs and the (111)A AlGaAs layer, were fully explained by taking the exciton diffusion towards the bottom of the V-groove into account, showing that the exciton diffusion driven by the spatial nonuniformity of the alloy compositions and/or geometry of the substrates is a key to controlling the PL properties of the nanostructures. |
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