Formation of zinc oxide quasibicrystal structures

Quasibicrystal structures with interblock boundaries of epitaxial zinc oxide layers on a sapphire substrate along a given direction have been obtained for producing submicron electronic devices. It is shown that the use of the buffer technique allows one to grow on one (10 $\bar 1$ 2) α-Al₂O₃ substrate ZnO layers oriented in the (11 $\bar 2$ 0)and (0001) planes with clearly pronounced interlayer boundaries. The morphology and structural characteristics of these layers are studied.