Very high frequency spectroscopy and tuning of a single-cooper-pair transistor with an on-chip generator |
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Authors: | Billangeon P-M Pierre F Bouchiat H Deblock R |
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Institution: | Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France. |
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Abstract: | A single-Cooper-pair transistor (SCPT) is coupled capacitively to a voltage biased Josephson junction, used as a high-frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the dc Josephson current of the SCPT was measured. The phase and gate bias dependence of energy levels of the SCPT at high energy is probed. Because the energies of photons can be higher than the superconducting gap we can induce not only transfer of Cooper pairs but also transfer of quasiparticles through the island of the SCPT, thus controlling the poisoning of the SCPT. This can both decrease and increase the average Josephson energy of the SCPT: its supercurrent is then controlled by high-frequency irradiation. |
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