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Carrier-density-dependent lattice stability in InSb |
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| Authors: | Hillyard P B Gaffney K J Lindenberg A M Engemann S Akre R A Arthur J Blome C Bucksbaum P H Cavalieri A L Deb A Falcone R W Fritz D M Fuoss P H Hajdu J Krejcik P Larsson J Lee S H Meyer D A Nelson A J Pahl R Reis D A Rudati J Siddons D P Sokolowski-Tinten K von der Linde D Hastings J B |
| Affiliation: | Department of Chemistry, Stanford University, Stanford, California 94305, USA. |
| Abstract: | The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrupt carrier dependent onset for potential energy surface softening and the appearance of accelerated atomic disordering for a very high average carrier density have been observed. Inertial dynamics dominate the early stages of crystal disordering for a wide range of carrier densities between the onset of crystal softening and the appearance of accelerated atomic disordering. |
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