Surface charge transfer doping of graphene using a strong molecular dopant CN6-CP |
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Institution: | 1. Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;2. School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | Surface charge transfer doping of graphene plays an important role in graphene-based electronics due to its simplicity, high doping efficiency, and easy-controllability. Here, we demonstrate the effective surface charge transfer hole doping of graphene by using a strong p-type molecular dopant hexacyano-trimethylene-cyclopropane (CN6-CP). The CN6-CP exhibits a very high intrinsic work function of 6.37 eV, which facilitates remarkable electron transfer from graphene to CN6-CP as revealed by in situ photoelectron spectroscopy investigations. Consequently, hole accumulation appears in the graphene layer at the direct contact with CN6-CP. As evidenced by Hall effect measurements, the areal hole density of graphene significantly increased from 8.3 × 1012 cm?2 to 2.21 × 1013 cm?2 upon 6 nm CN6-CP evaporation. The CN6-CP acceptor with strong p-doping effect has great implications for both graphene-based and organic electronics. |
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