Interface phonon assisted transition in double quantum well |
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| Authors: | B.H. Wu J.C. Cao G.Q. Xia H.C. Liu |
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| Affiliation: | (1) State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, PR China, CN;(2) Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6, Canada, CA |
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| Abstract: | A detailed calculation of interface phonon assisted electron intersubband transition in double GaAs/AlGaAs quantum well structure is presented. Our calculation concentrates on the lowest two subbands which can be designed to be in resonance with a given interface phonon mode. Various phonon mode profiles display quasi-symmetric or quasi-antisymmetric shapes. The quasi-antisymmetric phonon modes give rise to much larger transition rates than those assisted by quasi-symmetric ones. The transition rate reaches a maximum when the subband separation coincides with a given phonon mode energy. The calculation procedure presented here can be easily applied to the design and simulation of other low dimensional semiconductor structures, such as quantum cascade lasers. Received 22 December 2002 Published online 23 May 2003 RID="a" ID="a"e-mail: bhwu@263.net |
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| Keywords: | PACS. 78.67.De Quantum wells – 63.20.Kr Phonon-electron and phonon-phonon interactions – 72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations |
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