Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates |
| |
| Authors: | V Trtík F Sánchez R Aguiar Y Maniette C Ferrater M Varela |
| |
| Institution: | (1) Universitat de Barcelona, Departament de Física Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain (Fax: +34-34021138, E-mail: mvarela@fae.ub.es), ES;(2) Universitat de Barcelona, Serveis Cientifico-Tècnics, C. Marti i Franques s/n, E-08028 Barcelona, Spain, ES |
| |
| Abstract: | 2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time
at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO2 was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO2(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10-2 mbar. The best crystal quality was obtained at around 3×10-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron
microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm.
Received: 25 September 1997/Accepted: 22 April 1998 |
| |
| Keywords: | PACS: 68 55 81 15 Z |
| 本文献已被 SpringerLink 等数据库收录！ |
|
