SrTiO3(110) thin films grown directly on different oriented silicon substrates |
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Authors: | J.H. Hao J. Gao H.K. Wong |
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Affiliation: | (1) Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong;(2) Physics Department, The Chinese University of Hong Kong, Shatin, Hong Kong |
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Abstract: | We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ–2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers. PACS 77.55.+f; 68.55.JK; 81.15Fg |
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