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Blue Photoluminescence of Oxidized Films of Porous Silicon |
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| Authors: | V V Filippov P P Pershukevich V V Kuznetsova V S Khomenko L N Dolgii |
| Institution: | (1) B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 F. Skorina Ave., Minsk, 220072, Belarus;(2) Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, Minsk, Belarus;(3) Information Science and Radioelectronics, Belarusian State University, Minsk, Belarus |
| Abstract: | It is found that the films of n +-type porous silicon of low (10–50%) porosity exhibit photoluminescence in the region 400–500 nm after a 5-month storage in an air atmosphere. The spectrum of blue photoluminescence of the least porous but strongly oxidized films has maxima at 417, 435, and 465 nm. The same spectrum structure manifests itself upon the introduction of an Er3+- and Yb3+-containing complex. The mechanisms of blue photoluminesence are discussed. |
| Keywords: | porous silicon photoluminescence spectrum photoexcitation spectrum |
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