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Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides |
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| Authors: | A. Trita,F. Bragheri,V. Degiorgio,D. Colombo,H. von Kä nel,E. Mü ller,E. Bonera,F. Pezzoli,M. Guzzi |
| Affiliation: | a CNISM and Dipartimento di Elettronica, Università di Pavia, Via Ferrata 1, I-27100 Pavia, Italy b CNISM and L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, via Anzani 42, I-22100 Como, Italy c ETH Zürich (EMEZ), CH-8093 Zürich, Switzerland d Institute of Particle Physics, ETH Zürich, CH-8093 Zürich, Switzerland e CNISM and L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy |
| Abstract: | Silicon-rich SiGe alloys represent a promising platform for the development of large-area single-mode optical waveguides to be integrated in silicon-based optical circuits. We find that SiGe layers epitaxially grown on Si successfully guide radiation with a 1.55 μm wavelength, but, beyond a critical core thickness, their optical properties are strongly affected by the clustering of misfit dislocations at the interface between Si and SiGe, leading to a significant perturbation of the local refractive index. Transmission electron microscopy and micro-Raman spectroscopy, together with finite-element simulations, provide a complete analysis of the impact of dislocations on optical propagation. |
| Keywords: | 42.82.&minus m 42.82.Bq |
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