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Problem of impurity states in narrow-gap lead telluride-based semiconductors |
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| Authors: | L. I. Ryabova D. R. Khokhlov |
| Affiliation: | (1) Moscow State University, Moscow, 119992, Russia |
| Abstract: | A review of recent results of experimental investigations devoted to studying unusual properties of impurity states in doped narrow-gap lead telluride-based semiconductors is presented. These results are analyzed in the framework of existing theoretical concepts. |
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