Effect of Cd impurity on the electrical properties of a-Se80Te20 |
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Institution: | Department of Physics, Harcourt Butler Technological Institute, Kanpur, 208 002, India;Department of Intensive Care Unit, Zhejiang Hospital, Hangzhou 310013, Zhejiang, China |
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Abstract: | Temperature dependence of dark and photoconductivity is studied in amorphous films of Se80Te20−xCdx in the temperature range (300 K to 380 K) with a view to see the effect of Cd impurity on a-Se80Te20 binary alloy. It is observed that, at low concentration of Cd (x = 0.5), the dark and photoconductivity increase at all temperatures. However, at higher concentration of Cd (x = 10), an appreciable reduction in these parameters occurs in the same temperature range. The photosensitivity (σph/σd) remains unchanged at x = 0.5 but decreases quite significantly at x = 10. The results are explained in terms of impurity doping at x = 0.5 and alloying effect at x = 10. |
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