|
|||||
|
|
Electronic properties of alkali metal/silicon interfaces: A new picture |
|
| Affiliation: | 1. National Key Laboratory of Science and Technology on High-strength Structural Materials, Central South University, Changsha 410083, Hunan, China;2. Institute of Physics of Materials, v.v.i., Czech Academy of Sciences, Žižkova 22, Brno CZ-61600, Czech Republic;3. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA |
| Abstract: | Adsorption of Na and Cs on the Si(100)2 × 1 surface in the monolayer range is investigated by core level and valence band photoemission spectroscopy using synchrotron radiation. The alkali metals are found to induce an electronic interface state near the Fermi level while hybridization between alkali adsorbate “s” and silicon substrate “3p” valence electrons occurs. These results provide evidence that the alkali metal/silicon bonding is covalent. This covalent bond is weak and polarized while plasmon at the alkali metal core level indicates adsorbate rather than substrate metallization. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |