Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110) |
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| Institution: | 1. Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA;2. Department of Mechanical Engineering, University of California, Riverside, 92521, California, USA |
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| Abstract: | The surface core-level binding energy shifts have been obtained for the In 4d and the P2p core-levels on the InP(110) surface. In agreement with previous studies of core-level shifts on the cleavage face of III–V semiconductors, the anion and cation shifts are of almost equal magnitude and are of opposite polarity (−0.31 and +0.30 eV respectively). The results are compared with a similar investigation of the GaAs(110) surface and discussed in terms of a recent calculation of surface core-level shifts for the (110) cleavage face of III–V semiconductors. |
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