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Cesium effect on ion-induced secondary photon emission from a GaAs surface
Affiliation:1. New Balance Foundation Obesity Prevention Center, Boston Children’s Hospital, 300 Longwood Avenue, Boston, MA 02115, USA;2. Department of Nutrition, Exercise and Sports, University of Copenhagen, Nørre Allé 51, DK-2200 Copenhagen, Denmark;3. Center for Lifespan Epidemiology Research, Tulane University School of Public Health and Tropical Medicine, 1440 Canal Street, New Orleans, LA 70112, USA;4. Department of Metabolism & Body Composition, Pennington Biomedical Research Center, 6400 Perkins Road, Baton Rouge, LA 70808, USA;5. Children’s Hospital Oakland Research Institute, 5700 Martin Luther King Jr. Way, Oakland, CA 94609, USA;6. Department of Nutrition, Harvard T.H. Chan School of Public Health, 677 Huntington Avenue, Boston, MA 02115, USA;1. College of Civil Engineering, Zhejiang University of Technology, Hangzhou, PR China;2. College of Civil Engineering and Architecture, The Key Laboratory of Engineering and Technology for Soft Soil Foundation and Tideland Reclamation of Zhejiang Province, Wenzhou University, Wenzhou, PR China;3. School of Engineering, University of Warwick, Coventry, UK;1. School of Optoelectronic Engineering, XiDian University, Xi’an, Shannxi 710071, China;2. United Microelectronics Center (CUMEC), No.20, Xiyuan South Street, Xiyong Microelectronics Industry Park, Gaoxin District, Chongqing, China;3. Science and Technology on Electromechanical Dynamic Control Laboratory, Xi’an, Shannxi 710065, China
Abstract:The ion-induced photon emission from excited Ga atoms sputtered from a GaAs single crystal was measured as a function of cesium coverage on the specimen surface. The results showed a remarkable non-linearity in photon yield against cesium coverage. This implies that the photon enhancement effect due to cesium adsorption is nonlocal and relates to the nonradiative deexcitation process of sputtered atoms.
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