| 光电双基区晶体管(PDUBAT)物理模型探讨 |
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| 引用本文： | 郑云光,张世林,郭维廉,李树荣,沙亚男,毛陆虹.光电双基区晶体管(PDUBAT)物理模型探讨[J].电子学报,2001,29(8):1123-1125. |
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| 作者姓名： | 郑云光 张世林 郭维廉 李树荣 沙亚男 毛陆虹 |
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| 作者单位： | 天津大学电子信息工程学院,天津 300072 |
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| 基金项目： | 天津市自然科学基金，983601411， |
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| 摘 要： | 本文通过分析器件内部电流传输探讨了光电双基区晶体管(PDUBAT)负阻特性产生机理,首次提出了PDUBAT负阻形成的原因是其输出管横向输出电流的反馈作用,这一看法得到了实验验证.
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| 关 键 词： | 光电双基区晶体管 间接耦合光电探测器 |
| 文章编号： | 0372-2112(2001)08-1123-03 |
| 收稿时间： | 2000-10-17 |
Discussion on the Physical Model in Photoelectric Dual Base Transistor |
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| ZHENG Yun-guang,ZHANG Shi-lin,GUO Wei-lian,LI Shu-rong,SHA Ya-nan,MAO Lu-hong.Discussion on the Physical Model in Photoelectric Dual Base Transistor[J].Acta Electronica Sinica,2001,29(8):1123-1125. |
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| Authors: | ZHENG Yun-guang ZHANG Shi-lin GUO Wei-lian LI Shu-rong SHA Ya-nan MAO Lu-hong |
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| Institution: | College of Electronic Information Engineering,Tianjin University,Tianjin 300072,China |
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| Abstract: | Through analyzing the internal current transport in photoelectric dual-base transistor(PDUBAT),the physical mechanism for the origin of the negative resistance characteristic in the device has been discussed.In this paper,we propose that the cause for the negative resistance in PDUBAT is coming from the feedback effect of the lateral component of output current of the vertical transistor in PDUBAT for the first time. This viewpoint has been confirmed by experiment. |
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| Keywords: | photoelectric dual-base transistor indirect coupling photoelectric detector |
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